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Limits RegistryPrinceton University researchers led by Loren Pfeiffer reported in 2021 GaAs/AlGaAs quantum wells grown by ultra-pure molecular beam epitaxy with a low-temperature electron mobility of about 57 million cm²/(V·s). It is the highest mobility measured in any semiconductor.
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Princeton University researchers led by Loren Pfeiffer reported in 2021 GaAs/AlGaAs quantum wells grown by ultra-pure molecular beam epitaxy with a low-temperature electron mobility of about 57 million cm²/(V·s). It is the highest mobility measured in any semiconductor.
The highest electron mobility ever measured in any semiconductor structure.
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Limits Registry. LR-HIGHEST-ELECTRON-MOBILITY-2DEG. Highest electron mobility in a semiconductor. 2026.